Ayayi Ahyi
Department of Physics
Associate Research Professor

Research Areas: Experimental Condensed Matter Physics

Office: Leach Science Center #315

Phone: (334) 844-7180

Email: ahyiaya@auburn.edu

Ph.D., Université des Sciences et Technologies de Lille
B.S., Université des Sciences et Technologies de Lille

Professional Employment
Associate Research Professor
2017 - present
Assistant Research Professor
Post Doctoral Research Fellow
Research Associate

Selected Publications

  1. "High Mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation Layer" Y.K. Sharma, A.C. Achy, T. Issac-Smith, A. Modic, M. Park, Y. Xu, E.L. Garfunckel, S. Dhar, L.C. Feldman, J.R. Williams. IEEE EDL V. 34 No2 p. 175-177 (2012) 
  2. "Enhanced Inversion mobility on 4H-SiC 1120 using Phosphorus and Nitrogen Interface passivation". G. Liu, A.C. Achy, Y. Xu, T. Isaac-Smith, Y.K. Sharma, L.C. Feldman, J.R. Williams, S.Dhar. IEEE EDL V. 34 No 2 p. 181-183 (2012) 
  3. "Electron Trapping 4-H SiC MOS Caps fabricated by sodium enhanced oxidation" A.F. Basile, A.C. Achy, L.C. Feldman, J.R. Williams, P.M. Mooney. Materials Science Forum, V. 717-720 p 757-760 (2012)
  4. "Temperaturedependence of inversion layer carrier concentration and Hall mobility in 4H SiC MOSFETs". S.Dhar, A.C. Achy, J.R. Williams, S.H. Ryu, A.K. Argarwal. Materials Science Forum, V 717-720 p 713-716 (2012)
  5. "Effects of Phosphorus at the SiO2/4H-SiC interface". Y.K. Sharma, A.C. Achy, T. Isaac-Smith, X. Shen, S.T.  Pantelides, X.G. Xhu, J. Rozen, L.C. Feldman, J.R. Williams, Y, Xu, E. Garfunkel, Materials Science Forum V. 717-720 p. 743-746 (2012) 

Last updated: 07/15/2020