Published: 03/04/2011


March 9, 2011

Photonic and Electronic Materials and Devices Based on III-V Compound Semiconductors:

Critical Elements for Current Information Technologies and Next-Generation Green Technologies


Jae-Hyun Ryou, Ph.D.

Center for Compound Semiconductors

Georgia Institute of Technology


The presentation will cover various electronic and photonic devices based upon III-V compound semiconductors and nanostructured materials including “wide”-bandgap III-nitride materials with a focus on materials and device physics.  The material structures and devices in the presentation include light-emitting diodes (LEDs), laser diodes (LDs), heterostructure field-effect transistors (HFETs), and heterojunction bipolar transistors (HBTs) for both photonic and electronic system applications as critical components in solid-state lighting and high voltage electronics.  The aspects of device and materials physics, material-related technical issues, and state-of-the-art device technology will be described.  Applications and outlook of the devices in current information technologies and next-generation green technologies will also be briefly discussed.

Wednesday,  March 9, 2011

2:45 PM – Allison Lab Rm. 200 – Refreshments

3:00 PM – Parker Hall Rm. 236 – Colloquium

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