COSAM » COSAM Faculty » Physics » Ayayi Ahyi

Ayayi Ahyi
Assistant Research Professor

Research Areas: Experimental Condensed Matter Physics

Office: Leach Science Center #315

Phone: (334) 844-7180


Ph.D., Université des Sciences et Technologies de Lille
B.S., Université des Sciences et Technologies de Lille

Professional Employment

Assistant Research Professor
Post Doctoral Research Fellow
Research Associate

Selected Publications

  1. "High Mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation Layer" Y.K. Sharma, A.C. Achy, T. Issac-Smith, A. Modic, M. Park, Y. Xu, E.L. Garfunckel, S. Dhar, L.C. Feldman, J.R. Williams. IEEE EDL V. 34 No2 p. 175-177 (2012) 
  2. "Enhanced Inversion mobility on 4H-SiC 1120 using Phosphorus and Nitrogen Interface passivation". G. Liu, A.C. Achy, Y. Xu, T. Isaac-Smith, Y.K. Sharma, L.C. Feldman, J.R. Williams, S.Dhar. IEEE EDL V. 34 No 2 p. 181-183 (2012) 
  3. "Electron Trapping 4-H SiC MOS Caps fabricated by sodium enhanced oxidation" A.F. Basile, A.C. Achy, L.C. Feldman, J.R. Williams, P.M. Mooney. Materials Science Forum, V. 717-720 p 757-760 (2012)
  4. "Temperaturedependence of inversion layer carrier concentration and Hall mobility in 4H SiC MOSFETs". S.Dhar, A.C. Achy, J.R. Williams, S.H. Ryu, A.K. Argarwal. Materials Science Forum, V 717-720 p 713-716 (2012)
  5. "Effects of Phosphorus at the SiO2/4H-SiC interface". Y.K. Sharma, A.C. Achy, T. Isaac-Smith, X. Shen, S.T.  Pantelides, X.G. Xhu, J. Rozen, L.C. Feldman, J.R. Williams, Y, Xu, E. Garfunkel, Materials Science Forum V. 717-720 p. 743-746 (2012) 

Last updated: 05/25/2016