COSAM » COSAM Faculty » Physics » Sarit Dhar

Sarit Dhar
Associate Professor

Research Areas: Experimental Condensed Matter Physics

Office: 305 Allison Laboratory

206 Allison Laboratories
Auburn, AL 36849-5319

Phone: (334) 844-4618


Ph.D., Vanderbilt University
M.S., Indian Institute of Technology
B.S., Indian Institute of Technology

Professional Employment

Assistant Professor, Auburn University
2012 - present
Research Scientist, Cree Inc.
2008 - 2012
Research Associate, Vanderbilt University
2005 - 2008
Graduate Research Assistant, Vanderbilt University
2001 - 2005
Graduate Teaching Assistant, Vanderbilt University
2000 - 2001

Honors and Awards

AU IGP 2013 ,“Atomic force microscope for characterization of nanomaterials and surfaces”, Team member (PI: Zhang, Chemistry)
Nominated for Dean's Research Award, COSAM

Professional Activities

Member of: Materials Research Society, Electrochemical Society, Institute of Electrical and Electronics Engineers
NSF Panel Reviewer, for NSF SBIR virtual Panel, Program: Materials for Power Electronics, February 13, 2014
Reviewer for Proprietary Proposal Review Panel (PPRP) for Center for Functional Nanomaterials (CFN) at Brookhaven National Laboratory, starting May 2013 for a period of two years.
Served an External Graduate Committee for the Ph.D. Dissertation of Ms. C.X. Chang at Vanderbilt University, 2013
Reviewer for the following journals: IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Solid State Electronics, Journal of Applied Physics, Applied Physics Letters, Journal of Physics D: Applied Physics, Semiconductor Science and Technology, Nanotechnology and ECS Journal of Solid State Science and Technology

Selected Publications

  1. S. Dhar, A.C. Ahyi, J.R. Williams, S. -H. Ryu and A.K. Agarwal, Temperature dependence of inversion layer carrier  carrier concentration and Hall mobility in 4h=SiC MOSFET", accepted for publication, Materials Science Forum (2012)
  2. A. Basile, S. Dhar and P.M. Mooney, "Electron trapping in 4-G SiC MOS capacitors fabricated by pre-oxidation nitrogen implantation", Journal of Applied Physics, 109, 114505 (2011)
  3. B. R. Tuttle, S. Dhar, S.-H Ryu, X. Zhu, J.R. Williams, L.C. Felderman and S.T. Pantelides, "High  electron mobility in 4-H SiC metal-oxide-semidconductor field effect transistors", Journal of Applied Physics, 108 054509 (2010)
  4. S. Dhar, S. Haney, L. Cheng, S.-H. Ryu, X. Zhu, A.k. Agarwal, L.C. Yu and K.P. Cheung, "Inversion layer carrier concerntration and mobility in 4-H-SiC metal-oxide-semiconcuctor field effect transistors", Journal of Applied Physics, 108,04549 (2010)
  5. S. Dhar, S.-H Ryu and K. Argarwal, " A study on pre-oxidation N implantation for the improvement of channel mobility in 4-H SiC MOSFETs, IEEE Transactions on Electron. Devices, 57, 1195 (2010)

Last updated: 12/06/2017