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Auburn University 2 MV Pelletron Accelerator


Auburn University  2 Million Volt Dual Source Tandem Accelerator

Proton Irradiation: H+ 100 keV-4 MeV                            

Ion Implantation: Almost any ion except Noble gases 100keV-12 MeV dependent on final charge

Typical elements: N, Al and P

Beam current is dependent on "most probable stripping cross section for a given terminal (dome) voltage".

Rutherford Backscattering Spectroscopy: Elemental composition of thin films and substrates

Ion Beam Channeling: Surface structure and material crystallinity analysis

Recent Publications

C. Jiao, A. C. Ahyi, C. Xu, D. Morisette, L. C. Feldman, and S. Dhar. "Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence," Journal of Applied Physics, 119, 155705 (2016) DOI: 10.1063/1.4947117

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, and J. R. Williams. "High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer," IEEE Electron Device Letters34 (2), 175 (2013) DOI: 10.1109/LED.2012.2232900

Aaron Modic, Gang Liu, Ayayi C. Ahyi, Yuming Zhou, Pingye Xu, Michael C. Hamilton, John R. Williams, Leonard C. Feldman, and Sarit Dhar. "High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping," IEEE Electron Device Letters35 (9), 894 (2014) DOI: 10.1109/LED.2014.2336592

A. Modic, Y.K. Sharma, Y. Xu, G. Liu, A.C. Ahyi, J.R. Williams, L.C. Feldman, and S. Dhar. "Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces," Journal of Electronic Materials43 (4), 857 (2014) DOI: 10.1007/s11664-014-3022-8

Last Updated: 10/09/2017