Current Areas of Research

Identifying the roles of individual chemical species in film growth.: We are correlating the presence and concentration of stable and radical species in the gas-phase environment of the plasma to desirable and undesirable properties of the films that are grown.
Determining the reaction sequence in the plasma which leads to rapid interconversion.: We are replacing each feed gas with isotopically labeled equivalents to allow us to descriminate between molecules introduced into the plasma and molecules formed in the plasma.
Investigating the role of nitrogen atoms in the growth of nitride films.: By duplication the plasma conditons actually used for molecular beam epitaxial growth of the III-V nitride films, we will measure the actual concentrations of nitrogen atoms available for film growth.
Expanding the range of growth conditons for plasma deposition of diamond.: Utilizing our ability to make real-time measurements of the concentrations of all hydrocarbon species present in the plasma, we will use our emerging knowledge of the roles of individual species to adjust the growth parameters to allow for higher growth rates and/or growth at lower substrate temperatures.

Other Materials Groups in the Auburn Chemistry Department