Sarit Dhar, assistant professor in the Department of Physics, was awarded a $598,777 grant from the National Science Foundation’s Partnerships for Innovation program. The grant will support collaborative research between Auburn University and industry partners CoolCAD Electronics, LLC, in College Park Md., and United Silicon Carbide, Inc., in Monmouoth Junction, N.J. CoolCAD Electronics performs design, analysis and prototyping for cryogenic SiC and IR electronics, and United Silicon Carbide works on the design, fabrication and commercialization of SiC technologies. The grant, “Building Innovation Capacity,” is focused on building the basic foundations of a silicon-carbide-based, high-temperature, integrated circuit technology. The final goal is to demonstrate a major polytype of silicon carbide (4H-SiC) metal-oxide semiconductor field-effect-transistor (that is, a 4H-SiC MOSFET)-based operational amplifier, operating at 250°C or higher. The research will increase U.S. technological competitiveness, increase the viability of small business partners, and develop students capable of contributing to the semiconductor industry. Click here for more information on the grant.